Courtesy of "LENR Forum" - Follow links at - http://www.lenrforum.eu/viewtopic.php?t=569&p=2283
U.S. Patent No. US 8,227,020 July 24, 2012 ABSTRACT: Techniques to form dislocation cores along an interface of a multilayer thin film structure are described. The loading and/or deloading of isotopes of hydrogen are also described in association with core formation. The described techniques can be applied to superconductive structure formation, x-ray and charged particle generation, nuclear reaction processes, and/or inertial confinement targets.
