Hi Dima,
   
  The reason I reverted to using version 7 is because I ran into issues 
converting a technology to a library for editing in version 8.4. Below is a 
response from Steve Rubin when I first reported this problem. So far, version 7 
has been behaving fairly well - an occasional crash but I've been careful about 
backing up libraries.
   
  Thanks again,
  Pierce
   
  At 10:40 PM 4/1/2007, you wrote:
  I'm using version 8.4.
 
Pierce

Steven Rubin <[EMAIL PROTECTED]> wrote:
    
   At 12:47 AM 4/1/2007, you wrote:
  
   >Hello,
  
   >
  
   >I think I have found what seems to be a bug. I am trying to add a 
  
   >pbase layer and then an npn transistor node to the mocmos 
  
   >technology. I have tried a simple experiment where I converted a 
  
   >technology to library for editing, and chose mocmos. Then I tried to 
  
   >immediately convert the library back to a technology, giving it the 
  
   >name: mocmos_abn. This failed, with Electric having a problem with 
  
   >determining the stretching rules for the metal-1 pin layer. At other 
  
   >times, the problem can be with the node-P-Transistor-Scalable. I've 
  
   >tried several things and Electric always finds a problem with things 
  
   >I haven't touched, which is why this really seems like a bug to me.  
I think this has been fixed since 8.4 was released.  However, it is not a 
simple fix...you would need a completely new release.

We plan to make one in less than 2 months, but that may be a long wait for you.

Alternatively, you could hand-edit the technology library to make it more 
useful.  Nodes are described with 4 separate examples plus some text.  Each of 
these 5 pieces of graphical information must be far enough from the others that 
they can be easily separated.  The error message that you are getting indicates 
they are too close.  So you could hand-edit these cells to move them farther 
apart.

   -Steve 
   
   
   
  

[EMAIL PROTECTED] wrote:
  Hello Pierce,

Why do you use version 7 ? The latest released
Electric version is 8.04.

It will be easier for me to help you with technology
tuning of Electric 8.04,
because I already forgot many things from C Eelctric.

For now, I see that Electric 8 reads technology
libraries from Electric 7 with errors.
I can look more tomorrow (on my work computer).
However, if you can recreate the technology library
in Electric 8 , then I shall look immediatly
at technology issues in Electric 8 rather than
dealing with incompatibilities of Electric 8 and
Electric 7.

Moreover, I am developing an Xml format for
technology description which will apper in Electric
8.05 .
I beleive that AMI technology example can be a test
of usability of Xml technology description.

-Dima
  Hello,
   
  I've since found that the metal spacing error mentioned below does get 
detected by the DRC. I've also discovered that connecting to the transistor 
pins is better than I first thought, if I work with it, but I still haven't 
been able to avoid OVERLAP DRC errors.
   
  Thank you,
  Pierce

Pierce Keating <[EMAIL PROTECTED]> wrote:
    Hello,
   
  I have have been attempting to modify the mocmos library for the (MOSIS) AMI 
1.5u SCNA ABN process. In the modified technology, I built an NPN transistor 
using a pbase layer, all created according to the SCNA layer map as described 
here: http://www.mosis.com/Technical/Layermaps/lm-scmos_scna.html
   
  (I also removed the P-Well in the N-Transistor, since this process does not 
have a P-Well.)
   
  There are at least two issues I have run into. First I deliberately included 
a metal1-metal1 spacing error to see if the DRC would detect the error but it 
doesn't. Also, I can't seem to connect to the pins of the npn transistor Node, 
when trying to use the node in a layout. Actually I can connect to them but not 
without a DRC metal1 spacing error. For other nodes, the layout editor seems to 
know to connect a metal1 arc to a metal1 port, and without DRC errors.
   
  I've attached the libary to this email. If anyone would check it out and let 
me know what I'm doing wrong I would appreciate it very much.
   
  Thank you,
  Pierce Keating
    
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