OSU EECS will be hosting a colloquium today at 11am, and one tomorrow at
9am, both in Owen 106.

Monday
March 7
11:00 - 11:50 AM 
Owen 106
 
Behnam Analui 
Ph.D. Candidate
Electrical Engineering
Caltech


Integrated Systems for High-Speed Wireline Communication 

Wireline communication at 10Gb/s and beyond faces serious challenges.
Channel impairments such as attenuation of electrical transmission line
at high frequency and modal dispersion of multi-mode optical fiber
degrade received signal quality significantly and result in bit error
rates as large as 10-2. Adaptive equalization is a practical technique
for reducing the channel response impacts and for enabling higher data
rates and longer transmission distances. 

In the first part of the talk, the impact of jitter on link reliability
is discussed. An analytical treatment of data dependent jitter that has
resulted in design insights for jitter minimization will be presented.
The study provides basic theoretical understanding of previously
measurement-based roots of data dependent jitter distribution. It also
enables prediction of jitter impacts of general LTI systems.
Experimental data verify accuracy of predictions for various components
and demonstrate less than 7.5% error. 

In the second part, a new approach for adaptive equalization is
introduced. An eye-opening monitor architecture is presented that
leverages high-speed integrated analog signal processing to evaluate the
quality of the received signal. It generates a two-dimensional error
map, which is directly correlated to the eye diagram shape. The
evaluation result can be used as a cost function for the coefficient
optimization algorithm of the equalizer. Measurements of an integrated
CMOS prototype demonstrate up to 68dB error dynamic range at 10Gb/s
input rate. 


 
Tuesday
March 8
9:00 - 9:50 AM 
Owen 106 
 
Hamid Mahmoodi 
Ph.D. candidate
Electrical and Computer Engineering
Purdue University


Circuit Design in Nano-Scale Technologies: SRAM Perspective 

To achieve higher integration density and performance, silicon
technology has been aggressively scaled for more than 40 years. As
silicon devices are scaled down to sub-100nm regimes, power dissipation
and process variations are becoming major challenges for circuit design.
For continued scaling of technology, these issues must be addressed at
all levels of abstraction. 

The inter-die process variations, coupled with the intra-die variations
can result in significant delay spread in logic circuits and even
functional failures in SRAM cells. This talk will primarily focus on
statistical design methodologies for yield enhancement in SRAM. A
statistical modeling approach will be developed to model failure
probability of an SRAM cell and the yield of an SRAM array. Based on the
developed models, a methodology to statistically design the SRAM cell
and the memory organization will be presented. The developed methodology
can be used at an early stage of a design cycle to enhance memory yield
in nano-meter regimes. The proposed design approach provides, for the
first time, an integrated device, circuit, and architectural level
statistical optimization strategy for SRAM. In addition to the
statistical design, an adaptive body biasing technique will be presented
to further improve the yield of SRAM. The last part of the talk will
discuss the speaker's research vision and future research directions. 


Biography

Hamid Mahmoodi received the B.S. degree in electrical engineering from
Iran University of Science and Technology, Tehran, Iran, in 1998 and the
M.S. degree in electrical and computer engineering from the University
of Tehran, Iran, in 2000. He is a PhD candidate in electrical and
computer engineering at Purdue University, West Lafayette, IN. His
research interests include low-power, robust, and high-performance
circuit design for nano-scale bulk CMOS and SOI technologies. He has
more than 35 refereed publications in journals and conferences. He was a
recipient of the Best Paper Award of the 2004 International Conference
on Computer Design.
 

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