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Wednesday Carlos Galup-Montoro MOSFET MODELING FOR CIRCUIT ANALYSIS AND DESIGN An overview of the basic physics theory
required to build compact MOSFET models and a unified treatment of
inversion-charge and surface-potential models are provided. The needs of
digital, analog and RF designers as regards the availability of simple
equations for circuit design are taken into account. Compact expressions for
hand analysis or for automatic synthesis, valid in all the operating regions
(weak-moderate-strong inversion) are presented. Since designers in advanced technologies
are increasingly concerned with fluctuations, the modeling of fluctuations is
emphasized. A unified approach for both space (matching) and time (noise)
fluctuations is introduced. Biography: Carlos Galup-Montoro is a professor in
the Electrical Engineering Department at the Federal University of Santa
Catarina, Brazil. His research interests include semiconductor-device modeling
and mixed-ICdesign. Galup- Montoro has an engineering degree in electronics and
a doctor of engineering degree from the Institut National Polytechnique de
Grenoble, France. |
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