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Wednesday Carlos Galup-Montoro MOSFET MODELING FOR CIRCUIT ANALYSIS AND DESIGN An overview of the basic physics theory
required to build compact MOSFET models and a unified treatment of inversion-charge
and surface-potential models are provided. The needs of digital, analog and RF
designers as regards the availability of simple equations for circuit design
are taken into account. Compact expressions for hand analysis or for automatic
synthesis, valid in all the operating regions (weak-moderate-strong inversion)
are presented. Since designers in advanced technologies are increasingly
concerned with fluctuations, the modeling of fluctuations is emphasized. A
unified approach for both space (matching) and time (noise) fluctuations is
introduced. Biography: Carlos Galup-Montoro is a professor in
the Electrical Engineering Department at the Federal University of Santa
Catarina, Brazil. His research interests include semiconductor-device modeling
and mixed-ICdesign. Galup- Montoro has an engineering degree in electronics and
a doctor of engineering degree from the Institut National Polytechnique de
Grenoble, France. ***Location is different from the normal colloquium classroom. |
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