Colloquium: ECE Faculty Candidate
Monday April 30 11:00 - 11:50 AM ***Special time and location*** Kelley 1007 Bhaskar Banerjee Graduate Research Assistant School of Electrical and Computer Engineering Georgia Institute of Technology Radio Frequency Integrated Circuits for Next Generation Communication Systems The increasing demand for compact, low-cost, and low-power communication systems has promoted the pursuit of ultra low power analog, mixed-signal and radio frequency (RF) circuits. The tremendous increase in the operation frequencies of Silicon technologies - both Complementary Metal Oxide Semiconductors (CMOS) and Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) - has made it possible to design high-speed analog, RF and mixed signal circuits with significantly lower power consumption with high levels of integration. Aggressive scaling and the concomitant increase in the frequency of operation, coupled with the low cost and high integration capability have made Si-CMOS a promising technology of choice for RF, microwave and millimeter-wave circuit development. Along with the tremendous increase in speed, there are significant challenges in the modeling and design using aggressively scaled CMOS and SiGe technologies. This presentation will focus on the development of high speed analog, mixed-signal and RF front-end circuits for wireless communication systems using silicon-based technologies. A low power, dual-band RF transceiver for IEEE 802.11a/b/g applications using SiGe technology will be presented, with a novel architecture that uses a single off-chip frequency synthesizer for both 2.4GHz and 5GHz bands. Substrate parastic effects in silicon has been analyzed and modeled to optimize the circuit performance. Analysis and modeling of RF performance of aggressively scaled Si-CMOS and SiGe HBT transistors will be presented, as they are very critical for RF circuit development. The talk will also focus on the evolution of high data rate next generation wireless communication systems involving multi-input-multi-output (MIMO) systems and cognitive radios. Biography: Bhaskar Banerjee received his B. Tech. (Honors) degree in Electronics and Electrical Communication Engineering from Indian Institute of Technology, Kharagpur, in 2001, and the M.S. and Ph.D. degrees in Electrical and Computer Engineering from Georgia Institute of Technology, Atlanta, in 2003 and 2006, respectively. He has worked as a graduate intern at IBM Thomas J. Watson Research Center, Yorktown Heights, NY and National Semiconductor Corporation. Previously, he has worked as graduate co-op at RF Solutions (now a part of Anadigics Inc.) and under-graduate intern at Texas Instruments Asia Development Center (India). He has authored and co-authored 20 journal and conference papers.
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