Colloquium: ECE Faculty Candidate

 

Monday                      
April 30
11:00 - 11:50 AM                 ***Special time and location***
Kelley 1007

 

Bhaskar Banerjee 
Graduate Research Assistant
School of Electrical and Computer Engineering
Georgia Institute of Technology

 

Radio Frequency Integrated Circuits for Next Generation Communication
Systems

 

The increasing demand for compact, low-cost, and low-power communication
systems has promoted the pursuit of ultra low power analog, mixed-signal
and radio frequency (RF) circuits. The tremendous increase in the
operation frequencies of Silicon technologies - both Complementary Metal
Oxide Semiconductors (CMOS) and Silicon Germanium (SiGe) Heterojunction
Bipolar Transistor (HBT) - has made it possible to design high-speed
analog, RF and mixed signal circuits with significantly lower power
consumption with high levels of integration. Aggressive scaling and the
concomitant increase in the frequency of operation, coupled with the low
cost and high integration capability have made Si-CMOS a promising
technology of choice for RF, microwave and millimeter-wave circuit
development. Along with the tremendous increase in speed, there are
significant challenges in the modeling and design using aggressively
scaled CMOS and SiGe technologies. This presentation will focus on the
development of high speed analog, mixed-signal and RF front-end circuits
for wireless communication systems using silicon-based technologies. A
low power, dual-band RF transceiver for IEEE 802.11a/b/g applications
using SiGe technology will be presented, with a novel architecture that
uses a single off-chip frequency synthesizer for both 2.4GHz and 5GHz
bands. Substrate parastic effects in silicon has been analyzed and
modeled to optimize the circuit performance. Analysis and modeling of RF
performance of aggressively scaled Si-CMOS and SiGe HBT transistors will
be presented, as they are very critical for RF circuit development. The
talk will also focus on the evolution of high data rate next generation
wireless communication systems involving multi-input-multi-output (MIMO)
systems and cognitive radios.

 

Biography:

 

Bhaskar Banerjee received his B. Tech. (Honors) degree in Electronics
and Electrical Communication Engineering from Indian Institute of
Technology, Kharagpur, in 2001, and the M.S. and Ph.D. degrees in
Electrical and Computer Engineering from Georgia Institute of
Technology, Atlanta, in 2003 and 2006, respectively. He has worked as a
graduate intern at IBM Thomas J. Watson Research Center, Yorktown
Heights, NY and National Semiconductor Corporation. Previously, he has
worked as graduate co-op at RF Solutions (now a part of Anadigics Inc.)
and under-graduate intern at Texas Instruments Asia Development Center
(India). He has authored and co-authored 20 journal and conference
papers.

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