ECE Faculty Candidate

 

Friday                                    **Special day, time, and location**

May 18th

11 - 11:50am

KEC 1007

 

John F. Conley, Jr.

Sharp Labs of America

Camas, WA

 

Nanotechnology:  Field Emission Induced UV Electroluminescence of Carbon 
Nanotubes Coated with Atomic Layer Deposited ZnO and Directed Integration of 
ZnO Nanobridge Devices

 

The seminar will begin with a brief introduction to nanotechnology followed by 
a description of two recent projects.  In the first, atomic layer deposition 
(ALD) was used to coat carbon nanotubes (CNTs) with a thin film of ZnO.  ALD is 
a highly conformal deposition technique in which films are deposited on a 
surface one monolayer at a time.  CNTs are well known to have excellent field 
emission properties.  ZnO is a versatile wide bandgap transparent semiconductor 
material with unique piezoelectric, UV photo luminescent (PL), gas sensing, and 
field emission properties that hold much promise for nanotech applications.  
Annealing of the ZnO coated CNTs led to the formation of ZnO nanoparticles on 
the surface of the CNTs.  These unique structures were investigated with a 
combination of field emission, electroluminescence (EL), scanning electron 
microscopy (SEM), and transmission electron microscopy (TEM) measurements.  It 
was found that ZnO nanoparticle coated CNTs exhibited improved field emission 
characteristics and a UV EL peak at 382 nm that was not detectable in uncoated 
CNTs.  This work demonstrates the utility of ALD for surface modification of 
nanostructures

The second part of the seminar will discuss the directed assembly and 
integration of ZnO nanobridges into working devices on silicon-on-insulator 
substrates.  The work is unique in that the most widely used methods of 
nanowire (NW) growth (vapor-liquid-solid using metal catalysts such as Au) and 
NW integration (the "pick and place" method in which NWs are grown on one 
substrate, harvested into solution, and then deposited randomly onto a device 
subsrate) were avoided.  Instead, ZnO NWs were grown selectively via a 
vapor-solid method using a patterned ZnO thin-film seed layer that was 
deposited on Si trench sidewalls via ALD.  ZnO NWs grew to span the trench and 
self-terminated on the opposing surface, effectively forming electrically 
accessible ZnO horizontal nanobridge devices.  Vertical bridge devices were 
also constructed using undercut islands.  Directly grown horizontal ZnO 
nanobridge devices were operated as gas and UV sensors, demonstrating that this 
method represents a promising step towards practical large-scale integration of 
nanodevices into Si microelectronics.

 

Biography:

 

John F. Conley, Jr.

John Conley earned his B.S. in Electrical Engineering in 1991 and Ph.D. in 
Engineering Science and Mechanics in 1995 from The Pennsylvania State 
University where he won a 1996 Xerox Prize for his Ph.D. dissertation.  Dr. 
Conley was at Dynamics Research Corporation from 1995 to 2000 and at the Jet 
Propulsion Laboratory from 2000-2001, where he received an achievement award.  
In 2001, Dr. Conley became a senior member of the technical staff at Sharp 
Laboratories of America, where his research interests included atomic layer 
deposition, high- dielectrics, and optoelectronic/sensing device applications 
of nano-structured materials.  In 2002-03, while working at SLA, he served as 
an adjunct professor at the Vancouver campus of Washington State University.  
Since 2005, he has been the leader of the Novel Materials and Devices Group at 
SLA and has led the MEMS biosensor and silicon nanowire projects.

Dr. Conley has authored or co-authored over 90 technical papers (including 
several invited) and over 90 conference presentations.  He holds ten U.S. 
patents.  He has recently presented tutorial short courses on high-k 
dielectrics at two international conferences and was the lead co-editor of two 
special issues of IEEE Transactions on Device and Material Reliability.  He has 
also served on the technical and management committees of the IRPS, the SOI 
Conference, and the Nuclear and Space Radiation Effects Conference, and was 
technical program chair of the 2000 IEEE Microelectronics Reliability and 
Qualification Workshop.  In 2006, Dr. Conley served as the general program 
chair of the IEEE International Integrated Reliability Workshop. 

 

 

 

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