ECE Faculty Candidate Colloquium
Friday ***Special Time and Location*** January 23 10:00 - 10:50 AM Kelley 1007 Hasan Sharifi Ph.D. Birck Nanotechnology Center Purdue University Self-Aligned Wafer-Level Integration Technology (SAWLIT) with High Density Interconnects for RF, Mixed-Signal and Optoelectronic Applications In this talk, I will present my recently developed 2-D and 3-D heterogeneous integration techniques for RF, Microwave and optoelectronic circuits. The 2D integration is referred to as Self-Aligned Wafer Level Integration Technology (SAWLIT). In this technology, disparate dies are integrated together using a batch fabrication process to form a multi-chip module with very high density die to die interconnects. To demonstrate the capabilities of SAWLIT, two system implementations are shown. First, a 10GHz CMOS RF front-end with embedded passive components and a high-Q cavity filter is demonstrated. The second implementation is a heterogeneous integration of a high-gain 10Gb/s CMOS transimpedance amplifier with a near infrared InGaAs/InP photodiode. It is also shown that SAWLIT has a simple solution to suppress substrate noise in mixed-signal circuits. Through sidewall metallization of cavities surrounding individual dies in this integration technology, a truly grounded faraday-cage structure has been realized. Low-loss materials are also essential for any integration schemes deployed in RF microelectronics. Electrical characterization of Parylene-N and its application as a flexible substrate, multi-layer dielectric and passivation layer for 3D integrated circuits are also presented. Parylene-N measures a very low dielectric constant and an extremely low dielectric loss for frequencies up to 60GHz. The results also reveal that Parylene-N causes insignificant modifications to the properties of underlying passive and active structures. In simple experimental demonstrations, Parylene-N is used as a dielectric layer to create low-loss vertical interconnects as well as 3-D architectures on a CMOS substrate. Biography Hasan Sharifi received his PhD degree in Electrical and Computer Engineering in the areas of Microelectronics and Nanotechnology from Purdue University, West Lafayette in 2007. He is currently a research staff member at Birck Nanotechnology Center, Purdue University. His research interests are in the areas of RF/microwave devices and circuits, micro and nanoscale heterogeneous integration, MEMS, and nanoelectronic technology. He has more than fifteen years academic and industrial experience and has published more than 20 journal and refereed conference papers as well as two patents. Hasan is the recipient of a number of awards, including special merit award as an outstanding research staff member and extraordinary merit award at Purdue University. He currently serves as a technical program committee for IEEE Silicon Monolithic Integrated Circuits in RF Systems.
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