Nanomagnetic Circuits with Spin Torque Majority Gates
When: Monday, November 21, 2011 - 4:00pm - 4:50pm Where: KEC 1001 Speaker Information Speaker Name: Dmitri Nikonov Speaker Title/Description: Research Scientist Components Research Group Intel CorporationSpeaker Biography: Dmitri E. Nikonov received his M.S. in Aeromechanical Engineering from the Moscow Institute of Physics and Technology in 1992 and Ph.D. in Physics from Texas A&M University in 1996, where he participated in the demonstration of the world's first laser without population inversion. He joint Intel Corporation in 1998 and is presently a Research Scientist in the Components Research group in Hillsboro, Oregon. He is responsible for the simulation and benchmarking of beyond-CMOS logic devices and for managing joint research programs with universities on nanotechnology and exploratory devices. From 1997 to 1998 he was a research engineer and lecturer at the Department of Electrical and Computer Engineering of University of California Santa Barbara. In 2006 he was appointed Adjunct Associate Professor of Electrical and Computer Engineering at Purdue University. Dmitri was a finalist of the Best Doctoral Thesis competition of the American Physical Society in 1997. He has 60 publications in refereed journals in quantum optics, lasers, nanoelectronics and spintronics, and 35 issued patents in optoelectronics, integrated optic and spintronic devices.
Nanomagnetic or spintronic circuits hold the promise of non-volatile and reconfigurable logic with small switching energy. The concept of circuits based on spin transfer torque switching in magnetic tunnel junctions is presented. Majority gates are concatenated without conversion to electric signals. A full adder circuit is simulated with a micromagnetic solver, dynamics of magnetization is explained via motion of domain walls. The switching speed and energy of the adder bit is comparable to single gates or nanomagnetic memories. A nonlinear transfer characteristic ensures noise margin.
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