** Note the special time and location **
Silicon Spintronics
Monday, June 2, 2014 - 3:00pm - 4:00pm
KEC 1007
Ron Jansen
2014 IEEE Magnetics Society Distinguished Lecturer
National Institute of Advanced Industrial Science and Technology (AIST)
Tsukuba, Japan
Abstract:
Worldwide efforts are underway to create a revolutionary and energy-efficient
information technology in which digital data is represented by the spin
orientation of electrons. Implementing spin functionality in silicon, the
mainstream semiconductor, has the potential to create broad impact. Remarkable
advances in the creation and control of spin polarization in silicon have
therefore generated much excitement. This lecture provides a transparent
picture of silicon spintronics, including the key developments and
achievements, our current understanding, as well as the unsolved puzzles and
challenges that stimulate researchers in the field. First, the basic idea of
spin-based information technology and silicon spintronics is introduced.
Ferromagnets have non-volatile memory functionality, whereas semiconductors
provide amplification and transistor action. What if we integrate ferromagnets
and silicon -- magnetic memory and logic computing? Then the main building
blocks are desc!
ribed: one needs to be able to create spin polarization in the silicon, to
manipulate it, and thereafter detect the spins. The generation of a spin flow
by electrical means (driven by a bias voltage) or thermal means (driven by a
heat flow) are discussed. Ferromagnetic tunnel contacts are shown to provide a
robust method to do this, at room temperature. The lecture concludes with a
prospect on future developments, which certainly includes more surprises as
silicon spintronics comes of age.
[1] R. Jansen, Silicon spintronics, Nature Materials 11, 400-408 (2012).
[2] J.C. Le Breton, S. Sharma, H. Saito, S. Yuasa and R. Jansen, Thermal spin
current from a ferromagnet to silicon by Seebeck spin tunnelling, Nature 475,
82-85 (2011).
[3] S.P. Dash, S. Sharma, R.S. Patel, M.P. de Jong and R. Jansen, Electrical
creation of spin polarization in silicon at room temperature, Nature 462,
491-494 (2009).
Biography:
Dr. Ron Jansen received a PhD in Experimental Physics from the University of Nijmegen (The Netherlands) in 1997, and was a postdoctoral associate at the Massachusetts Institute of Technology (MIT, Cambridge, USA). After that he moved to the University of Twente (The Netherlands), where he became a tenured assistant professor, associate professor, leader of the NanoElectronics Research Chair and group leader with the Netherlands Foundation for Fundamental Research on Matter (FOM). Since 2010, he works at the National Institute of Advanced Industrial Science and Technology (AIST, Tsukuba, Japan), where he is now a prime senior researcher at the Spintronics Research Center. He has published 100+ technical articles in peer-reviewed journals, incl. book chapters and reviews, and given more than 110+ invited scientific presentations. He received personal award grants from the Royal Netherlands Academy of Arts and Sciences and from the Netherlands Organization for Scientific Resear!
ch, and is IEEE Magnetics Society Distinguished Lecturer for 2014. He served on
international advisory boards and program committees of various international
conferences in magnetism, semiconductor devices and spintronics. He was editor
of IEEE Transactions on Magnetics and the European Journal of Applied Physics
and is a member of the IEEE Magnetics Society.
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