Deep UV laser based on III-nitride semiconductors KEC 1003 Mon, 10/26/2015 - 4:00pm
Xiaohang Li Assistant Professor, Division of Computer, Electrical, Mathematical Science and Engineering, King Abdullah University of Science and Technology Abstract: Wide-bandgap semiconductors such as III-nitrides (e.g. AlN, GaN and their compounds) have superior optical, electronic and structural properties for optoelectronics and electronics in general. In the past decades, the development of III-nitride optoelectronics including blue light-emitting diode (LED) and laser has led to revolutions in many industries as partially reflected by the Nobel Prize in Physics 2014. Despite these progresses, there are still tremendous opportunities to explore III-nitride semiconductors for applications in the shorter wavelength range (i.e. ultraviolet, or UV). For instance, the compact and reliable UV LED is expected to dramatically innovate the entire disinfection industry. The UV laser can create numerous opportunities in data storage, non-line-of-sight communication, Raman spectroscopy, and bioagent detection. This seminar will focus on the latest breakthroughs in III-nitride deep UV lasers. First the speaker will present the first successful attempt to grow high quality AlN layer on sapphire substrate at practical temperatures by metalorganic chemical vapor deposition (MOCVD). The AlN layer on sapphire is the template of choice for commercial devices operating in the deep UV spectrum. Then the speaker will present the works on state-of-the-art deep-UV lasers including the first laser emitting below 250 nm grown on sapphire. Bio: URL: http://eecs.oregonstate.edu/colloquium/deep-uv-laser-based-iii-nitride-semiconductors _______________________________________________ Colloquium mailing list [email protected] https://secure.engr.oregonstate.edu/mailman/listinfo/colloquium
