On 16/10/2025 22:15, Dmitry Baryshkov wrote:
On Thu, Oct 16, 2025 at 06:17:02PM +0200, David Heidelberg via B4 Relay wrote:
From: David Heidelberg <[email protected]>
Describe panel Tearing Effect (TE) GPIO line.
Reviewed-by: Konrad Dybcio <[email protected]>
Signed-off-by: David Heidelberg <[email protected]>
---
arch/arm64/boot/dts/qcom/sdm845-oneplus-common.dtsi | 1 +
1 file changed, 1 insertion(+)
diff --git a/arch/arm64/boot/dts/qcom/sdm845-oneplus-common.dtsi
b/arch/arm64/boot/dts/qcom/sdm845-oneplus-common.dtsi
index a8e87507d667b..b663345de0214 100644
--- a/arch/arm64/boot/dts/qcom/sdm845-oneplus-common.dtsi
+++ b/arch/arm64/boot/dts/qcom/sdm845-oneplus-common.dtsi
@@ -460,6 +460,7 @@ display_panel: panel@0 {
vci-supply = <&panel_vci_3v3>;
poc-supply = <&panel_vddi_poc_1p8>;
+ te-gpios = <&tlmm 30 GPIO_ACTIVE_HIGH>;
Isn't it GPIO 10?
The datasheet says that both 10 and 30 are TE GPIOs.
The downstream and mainline code describes gpio 30 as ESD check and as
you write. So generally it seems to be confirmed that 10 is TE (same as
for other sdm845 devices as Samsung S9).
Will be fixed in the next patchset version.
Thank you
reset-gpios = <&tlmm 6 GPIO_ACTIVE_LOW>;
pinctrl-0 = <&panel_default>;
--
2.51.0
--
David Heidelberg
