I am concerned about the body effect seen in FETs which cause the threshold voltage to move as the source voltage diverges from the body voltage.
In a standard CMOS process, as I understand it, the pFET is made by first embedding an nWell, and putting down a gate, and finally embedding two pWells on either side of the gate which are both contained in the original nWell. Usually the nWell is tied to the most positive voltage on the die. However is there a problem if I tie it to the most positive voltage on the pFET. Does doing this eliminate the body effect? Assuming the above question is yes, can I do a similar trick with nFETs. Can I encase them in a pWell which is encased in an nWell. By doing this I am not forced to tie the body of the nFET directly to the lowest potential. Do standard CMOS processes support this? Oliver -- You received this message because you are subscribed to the Google Groups "Electric VLSI Editor" group. To post to this group, send email to [email protected]. To unsubscribe from this group, send email to [email protected]. For more options, visit this group at http://groups.google.com/group/electricvlsi?hl=en.
