Hi all ! I am trying to simulate in the Electric a NMOS transistor. The model of the transistor I am using is the level=1 (the Schichman-Hodges Model). This model is in the attachment. I would like to know what options should I choose for the simulation in LTspice. (What options of spice engine and level should I choose ?)
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* BSIM3 models for AMI Semiconductor's C5 process * * Don't forget the .options scale=300nm if using drawn lengths * and the MOSIS SUBM design rules * * 2<Ldrawn<500 10<Wdrawn<10000 Vdd=5V * Note minimum L is 0.6 um while minimum W is 3 um * Change to level=49 when using HSPICE or SmartSpice .MODEL NMOS NMOS(Level=1 VTO=1.0 LAMBDA=0.031 PB=0.95 +CGSO=3.4E-10 CGDO=3.4E-10 CGBO=5.75E-10 RSH=1082 +CJ=6.8E-4 MJ=0.5 CJSW=1.26E-10 MJSW=0.5 JS=3.23E-8 +TOX=150E-10 NSUB=1.45E17 NSS=3E11 TPG=1 XJ=0.18 +LD=0.15 UO=363) * .MODEL PMOS PMOS(Level=1 VTO=1.0 LAMBDA=0.05 PB=0.94 +CGSO=5.08E-10 CGDO=5.08E-10 CGBO=5.75E-10 RSH=33.7 +CJ=5.01E-4 MJ=0.5 CJSW=1.38E-10 MJSW=0.5 JS=6.43E-8 +TOX=150E-10 NSUB=7.23E16 NSS=1E11 TPG=1 XJ=0.28 +LD=0.22 UO=363) *
