The solution is to create two Active layers in Electric, both with the
same GDS number. Also create two Select layers with the different GDS
numbers. Then use the appropriate Active and Select with the two types
of transistors, contacts, and wires. Then, when extracting, the correct
Active layer will match (assuming the correct Select is also there) and
it will generate the proper GDS when used.
-Steven Rubin
On 4/18/2020 10:41 AM, Alexandre Rusev wrote:
Hello folks
I am importing GDS/CIF cells of MOSIS SCN3ME_SUBM 350nm
technology (available here
https://www.mosis.com/pages/Technical/Layermaps/lm-scmos_scn3me)
And then doing extraction (Tools->Network->Extract ...)
The technology has only one ACTIVE layer id both for p-active and
n-active,
which are to be tell apart using P-select/N-select masks.
ACTIVE 43 CAA 2
N_PLUS_SELECT 45 CSN 4
P_PLUS_SELECT 44 CSP 4
So when I set id of 43 in my GDS mapping for P-active and N_active,
the result is that PMOS extracted properly bun NMOS becomes a set of
primitive nodes (P-actives, Poly, ...)
(tech layers table is here
https://www.mosis.com/pages/design/flows/design-flow-scmos-kits)
Looks like that situation with mocmossub is generally the same
Can anyone suggest a correct route for importing GDS/CIF
filescontaining the only one ACTIVE layer both for P-active/N-active
along with qualifier masks PSELECT/NSELECT (or P+SELECT/N+SELECT)
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