walter fry wrote:
A way to eliminate the power problem would be to switch to
a carbon substrate. Diamond is an excellent thermal conductor.
And the resulting transistors can run at much higher temperatures
without melting
I think that the thermal limit is diffusion of dopants in geometric
configs. Also vapor epitaxi was used on ruby and Alumina both relativly
cheap and matching the thermal coefficient of expansion of Si -WF-
I'm referring to using diamond transistors. Not layering Si
on top of diamond.
It won't happen tomorrow.
--
Allen Brown
work: Agilent Technologies non-work: http://www.peak.org/~abrown/
[EMAIL PROTECTED] [EMAIL PROTECTED]
Politics, n. strife of interests masquerading
as a contest of principles. ---Ambrose Bierce
_______________________________________________
EUGLUG mailing list
[email protected]
http://www.euglug.org/mailman/listinfo/euglug
