Hi Helge, On 06.08.2010 15:29, Wagner, Helge (GE Intelligent Platforms) wrote: > I am not sure if this was discussed before, but i would suggest to skip > programming blocks/areas which should be programmed to the erased state. > E.g. if half of the input file consists of 0xFF areas, we could half the > programming time. > > And on chips where read is much faster than erase (e.g. SST 25VF...) we > can speed up erasing if we do a read before erase and only erase that > blocks that are not already in the erased state. >
Fully agreed. In fact, I am working on a patch which will do exactly that. Right now the whole flashrom infrastructure is oriented to erase-in-bulk/write-in-bulk, but over the last few weeks a few patches have been merged which will allow us to perform partial writes and partial erases on an as-needed basis. Two patches for this sort of operation are still unmerged because we want to release the current well-tested state of flashrom as 0.9.3 first, and then change the internal interfaces in one go and give the codebase a few weeks to stabilize. Regards, Carl-Daniel -- http://www.hailfinger.org/ _______________________________________________ flashrom mailing list [email protected] http://www.flashrom.org/mailman/listinfo/flashrom
