On Wed, Jul 11, 2018 at 5:50 PM, Danny Milosavljevic
<dan...@scratchpost.org> wrote:
> http://soc.yonsei.ac.kr/Abstract/International_journal/pdf/106_Data%20Randomization%20Scheme%20for%20Endurance%20Enhancement%20and%20Interference%20Mitigation%20of%20Multilevel%20Flash%20Memory%20Devices.pdf

Thanks a lot

I didn't understand everything in there, but sufficiently to sleep
a bit less stupid tonight...

I think it boils down to that: this random data mitigates errors
that are due to cell content interferences. I don't think it is directly
related to cells wear.

Do you concur ?

Vincent Legoll

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