On Wed, 24 Oct 2007 11:40:31 -0500, McKown, John <[EMAIL PROTECTED]> wrote:
>... >http://www.tgdaily.com/content/view/34506/113/ > >This is about "resistor based memory". What is neat is that it is >supposed to be non-volitale, faster than DRAM, take less power than >DRAM, and be able to code multiple bits in a single cell. >... I'm going to assume that the device actually developed and the technology as described in the article are somewhat different. They start by saying this is Ferroelectric RAM but then mention nothing about ferroelectric properties at all. The go on to say that these semiconductor switches can be switched between high resistance and low resistance. (Gee. A transistor. As I recall, "Transistor" originally came from "transfer resistor" - a resistor with electronically controlled resistance.) But it uses mobile ions instead electrons or "holes" as in usual semiconductors. (Gee. A very slow transistor! Hopefully, the author of the article just didn't get it, but that some fast, low power ferroelectric memory has actually been developed. Pat O'Keefe ---------------------------------------------------------------------- For IBM-MAIN subscribe / signoff / archive access instructions, send email to [EMAIL PROTECTED] with the message: GET IBM-MAIN INFO Search the archives at http://bama.ua.edu/archives/ibm-main.html
