Hi, El 25/03/14 15:27, Rajesh Mallah escribió:
Hi , i am using tinymembench to bench mark 2 A20 based 1GB boards MELE finished in 6mins and the noname one finishes in 12mins. pls tell how to systematically debug the issue. at least dram settings are same. where else should i see? MELE: root@ltspmele:~# ./a10-meminfo-static dram_clk = 408 dram_type = 3 dram_rank_num = 1 dram_chip_density = 4096 dram_io_width = 16 dram_bus_width = 32 dram_cas = 9 dram_zq = 0x7f
zq is different from the other one
dram_odt_en = 0 dram_tpr0 = 0x42d899b7 dram_tpr1 = 0xa090 dram_tpr2 = 0x22a00 dram_tpr3 = 0x0 dram_emr1 = 0x4 dram_emr2 = 0x10
What happened to emr3?
NONAME: root@ltspenjoy:~# ./a10-meminfo-static dram_clk = 408 dram_type = 3 dram_rank_num = 1 dram_chip_density = 4096 dram_io_width = 16 dram_bus_width = 32 dram_cas = 9 dram_zq = 0x79 dram_odt_en = 0 dram_tpr0 = 0x42d899b7 dram_tpr1 = 0xa090 dram_tpr2 = 0x22a00 dram_tpr3 = 0x0 dram_emr1 = 0x4 dram_emr2 = 0x10 dram_emr3 = 0x0
Also, as Oliver mentioned, as these are A20 boards, MBUS frequency may be different. Do the speeds on tinymembench vary significantly? If you are using u-boot-sunxi and booting from MMC you can check the FAST_MBUS flag on boards.cfg
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