http://www.heliovolt.com/technology.php - with video
HelioVolt's Unique TechnologyHelioVolt FASST (tm) Process Rapid, Low Thermal Budget Process Adaptable to Multiple Substrates Controllable Process to Optimize Device Quality, Throughput and Yield Ability to Customize Form, Size, and Reflective Tints for Architectural Applications 8 US Patents issued so far, 3 applications pending The FASST (tm) process synthesizes the key CIGS absorber layer in two distinct steps. The first step is the deposition of two materials layers which form the chemical basis of the CIGS layer. The second step is the synthesis of those materials into a crystalline thin film of CIGS. The deposition of precursors on two separate surfaces allows each to be tailored independently, and low-temperature deposition allows rapid deposition while circumventing the problems caused by excessive re-evaporation of selenium, which always occurs at high temperature. In the second step of the process, the two coatings are pressed together into intimate contact. Rapid heating causes a chemical reaction between the two precursor films, forming the CIGS absorber layer. This is the similarity between the FASST(tm) process and anodic wafer bonding, a method developed historically to reduce the temperature required to bond two wafers together. By heating the film through the superstrate, the substrate is exposed to less heat, dramatically reducing the overall thermal budget of the process. Unlike any other method used to form CIGS films, HelioVolt's proprietary FASST(tm) process permits direct control of the pressure during synthesis, which guarantees effective incorporation of selenium into the crystal lattice, essential to its favorable electronic properties. The resulting CIGS film adheres to the substrate, allowing the superstrate to be reused. In effect, the superstrate is a reusable tool, a die used to emboss the crystallographic structure of CIGS onto the substrate in this revolutionary nanotechnology "printing" process. Video: HelioVolt's FASST (tm) Process Requires Microsoft Media Player Patents Issued April 19, 2005 US Patent 6,881,647 Synthesis of layers, coatings or films using templates September 28, 2004 US Patent 6,797,874 Layers, coatings or films synthesized using precursor layer exerted pressure containment September 7, 2004 US Patent 6,787,012 Apparatus for the synthesis of layers, coatings or films May 18, 2004 US Patent 6,736,986 "Chemical synthesis of layers, coatings or films using surfactants" April 13, 2004 US Patent 6,720,239 "Synthesis of layers, coatings or films using precursor layer exerted pressure containment " July 15, 2003 US Patent 6,593,213 "Synthesis of layers, coatings or films using electrostatic fields." May 6, 2003: US Patent 6,559,372 "Photovoltaic devices and compositions for use therein." December 31, 2002: US Patent 6,500,733 "Synthesis of layers, coatings or films using precursor layer exerted pressure containment." Gregory S. Williams [EMAIL PROTECTED] Reply with a "Thank you" if you liked this post. _____________________________ MEDIANEWS mailing list [email protected] To unsubscribe send an email to: [EMAIL PROTECTED]
