New RF Front-End Solutions Enable Wi-Fi Systems With +20dBm Antenna Power 6/21/2004 Ottawa, Canada - SiGe Semiconductor, Inc. today announced a new power amplifier, switch and RF front-end reference design that improve performance and manufacturability of Wi-Fi? systems.
The new SE2528L power amplifier delivers output power of up to +23dBm at 3.0% error vector magnitude (EVM) while operating in 802.11g mode. When paired with SiGe?s new SE2560L switch, which features low insertion losses and high linearity, manufacturers can design systems that achieve output power of +20dBm at the antenna. The high output power allows users to maintain reliable wireless connections over longer distances when using access points, printers, desktop computers and other Wi-Fi?-equipped consumer devices. The devices are combined in a complete RF front-end reference design that includes all of the circuitry required between the transceiver and the antenna, including the power amplifier, enable circuitry, power detector, switch, and filtering. The RF front-end reference design serves as a blueprint for high-performance WLAN systems, allowing manufacturers to quickly and cost-effectively develop next-generation products. ?Our new reference design offers a fully tested, proven development platform that takes the guesswork out of RF front-end design,? said Andrew Parolin, director, wireless power amplifiers, SiGe Semiconductor, Inc. ?We have worked closely with our customers to develop the highest performing power amplifier and switch combination on the market. Using these products along with our reference design allows manufacturers to quickly deliver WLAN systems with confidence in receiving high overall performance ratings from consumers.? SE2528L delivers leading performance; bundles with switch for complete, low-cost solution The SE2528L is based on SiGe?s proven power amplifier architecture optimized for 802.11b and 802.11g operation. Leveraging an advanced silicon germanium technology, the device features a market-leading combination of linearity, accuracy and stability. The power amplifier is characterized for both 3.3V and 5V operation, and includes on-chip power enable switch, bias control circuitry, and a power detector that minimizes antenna mis-match. The SE2528L interfaces directly to the SE2560L, a double pole, double throw (DPDT) RF switch in a transfer configuration. The switch is manufactured using a state-of-the-art pHEMT process that ensures the low insertion loss and high linearity required of WLAN systems. The SE2560L is easy to use, able to connect to both antennas without an RF crossover. The device can be used with any of SiGe Semiconductor?s 2.4GHz power amplifiers. http://www.wirelessdesignonline.com/content/news/article.asp?docid={caf1f21b-dc73-426c-a1a9-e3e9f49bd4b2} -- "NEXTEL-1 IT'S NOT JUST NEXTEL" Note The New address Subscribe to Nextel-1: http://www.groups.yahoo.com/subscribe/NEXTEL-1 "NEXTEL2 FOR iDEN SOFTWARE DEVELOPERS" Subscribe to Nextel2: http://www.groups.yahoo.com/subscribe/NEXTEL2 "WIRELESS FORUM HOMELAND SECURITY GROUP" The Complete Resource for Wireless Homeland Security. Subscribe to WFHSG: http://www.groups.yahoo.com/subscribe/WFHSG -- NYCwireless - http://www.nycwireless.net/ Un/Subscribe: http://lists.nycwireless.net/mailman/listinfo/nycwireless/ Archives: http://lists.nycwireless.net/pipermail/nycwireless/
