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** [tickets:#109] SAMD/SAM4L driver doubles flash erase**
**Status:** new
**Milestone:** 0.9.0
**Labels:** samd sam4l flash nor
**Created:** Sun Oct 18, 2015 11:32 AM UTC by Tom
**Last Updated:** Sun Oct 18, 2015 11:32 AM UTC
**Owner:** nobody
SAMD and SAM4L flash drivers perform erase as an integral part of write
operation. This difference from standard flash handling is not documented. Use
of traditional flash update scheme (e.g. gdb load, program ... erase) results
in double erase so flash endurance is effectively halved.
SAMD21 reference manual states:
21.6.5.3: The NVM Controller requires that an erase must be done before
programming.
on the contrary:
36.10: Note that on this flash technology, a max number of 8 consecutive write
is allowed per row. Once this number is reached, a row erase is mandatory.
IMHO a standard way of flash handling could be used for these MCUs as well as
for most of other NOR flash memories.
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