The current timeout for STM32 flash block erase and flash mass erase is
10 (ms), which is too tight, and fails around 50% of the time for me.
The data sheet for STM32F107VC specifies a maximum erase time of 40 ms
(for both operations).
I'd also consider it a bug that the code does not detect a timeout, but
just assumes that the operation has completed. The attached patch does
not address this bug.
The attached patch increases the timeouts from 10 to 100 ms. Please apply.
/Tobias
diff --git a/src/flash/nor/stm32x.c b/src/flash/nor/stm32x.c
index 818c474..0fdd148 100644
--- a/src/flash/nor/stm32x.c
+++ b/src/flash/nor/stm32x.c
@@ -331,7 +331,7 @@ static int stm32x_erase(struct flash_bank *bank, int first,
int last)
target_write_u32(target, STM32_FLASH_AR, bank->base +
bank->sectors[i].offset);
target_write_u32(target, STM32_FLASH_CR, FLASH_PER |
FLASH_STRT);
- status = stm32x_wait_status_busy(bank, 10);
+ status = stm32x_wait_status_busy(bank, 100);
if (status & FLASH_WRPRTERR)
return ERROR_FLASH_OPERATION_FAILED;
@@ -1183,7 +1183,7 @@ static int stm32x_mass_erase(struct flash_bank *bank)
target_write_u32(target, STM32_FLASH_CR, FLASH_MER);
target_write_u32(target, STM32_FLASH_CR, FLASH_MER | FLASH_STRT);
- status = stm32x_wait_status_busy(bank, 10);
+ status = stm32x_wait_status_busy(bank, 100);
target_write_u32(target, STM32_FLASH_CR, FLASH_LOCK);
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