Hi Iraida,
I am a little confused by your question.
GaAs structure has 8 atoms in unit cell with a = 5.653 Ang. If I had a
cluster 7 Ang in radius,
that won't give 900 atoms...that is a volume less than 3 x 3 x 3 unit
cells (216 atoms).
You can calculate for substitutional and interstitial
Dear All,
Do I understand correctly that using feff calculations it is impossible
to calculate the concentration of defects in a sample? I'll try to
explain my question with an example. Let us assume that we have a
(Ga,Mn)As sample, where Mn is a dopant. Comparing the experimental curve
(Mn K
