[PATCH 07/12] thermal: exynos: remove parsing of samsung,tmu_gain property

[Bartlomiej Zolnierkiewicz]

Since pdata gain values are SoC (not platform) specific just move
it from platform data to struct exynos_tmu_data instance. Then
remove parsing of samsung,tmu_gain property.

There should be no functional changes caused by this patch.

Signed-off-by: Bartlomiej Zolnierkiewicz 
---
 drivers/thermal/samsung/exynos_tmu.c | 18 +-
 drivers/thermal/samsung/exynos_tmu.h |  4 
 2 files changed, 9 insertions(+), 13 deletions(-)

diff --git a/drivers/thermal/samsung/exynos_tmu.c 
b/drivers/thermal/samsung/exynos_tmu.c
index 12bbf79..262ab41 100644
--- a/drivers/thermal/samsung/exynos_tmu.c
+++ b/drivers/thermal/samsung/exynos_tmu.c
@@ -192,6 +192,8 @@
  * @max_efuse_value: maximum valid trimming data
  * @temp_error1: fused value of the first point trim.
  * @temp_error2: fused value of the second point trim.
+ * @gain: gain of amplifier in the positive-TC generator block
+ * 0 < gain <= 15
  * @reference_voltage: reference voltage of amplifier
  * in the positive-TC generator block
  * 0 < reference_voltage <= 31
@@ -218,6 +220,7 @@ struct exynos_tmu_data {
u32 min_efuse_value;
u32 max_efuse_value;
u16 temp_error1, temp_error2;
+   u8 gain;
u8 reference_voltage;
struct regulator *regulator;
struct thermal_zone_device *tzd;
@@ -386,8 +389,6 @@ static int exynos_tmu_initialize(struct platform_device 
*pdev)
 
 static u32 get_con_reg(struct exynos_tmu_data *data, u32 con)
 {
-   struct exynos_tmu_platform_data *pdata = data->pdata;
-
if (data->soc == SOC_ARCH_EXYNOS4412 ||
data->soc == SOC_ARCH_EXYNOS3250)
con |= (EXYNOS4412_MUX_ADDR_VALUE << EXYNOS4412_MUX_ADDR_SHIFT);
@@ -396,7 +397,7 @@ static u32 get_con_reg(struct exynos_tmu_data *data, u32 
con)
con |= data->reference_voltage << EXYNOS_TMU_REF_VOLTAGE_SHIFT;
 
con &= ~(EXYNOS_TMU_BUF_SLOPE_SEL_MASK << 
EXYNOS_TMU_BUF_SLOPE_SEL_SHIFT);
-   con |= (pdata->gain << EXYNOS_TMU_BUF_SLOPE_SEL_SHIFT);
+   con |= (data->gain << EXYNOS_TMU_BUF_SLOPE_SEL_SHIFT);
 
con &= ~(EXYNOS_TMU_TRIP_MODE_MASK << EXYNOS_TMU_TRIP_MODE_SHIFT);
con |= (EXYNOS_NOISE_CANCEL_MODE << EXYNOS_TMU_TRIP_MODE_SHIFT);
@@ -1153,14 +1154,8 @@ static int exynos_of_get_soc_type(struct device_node *np)
 static int exynos_of_sensor_conf(struct device_node *np,
 struct exynos_tmu_platform_data *pdata)
 {
-   u32 value;
-   int ret;
-
of_node_get(np);
 
-   ret = of_property_read_u32(np, "samsung,tmu_gain", );
-   pdata->gain = (u8)value;
-
of_property_read_u32(np, "samsung,tmu_cal_type", >cal_type);
 
of_node_put(np);
@@ -1214,6 +1209,7 @@ static int exynos_map_dt_data(struct platform_device 
*pdev)
data->tmu_read = exynos4210_tmu_read;
data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
data->ntrip = 4;
+   data->gain = 15;
data->reference_voltage = 7;
data->efuse_value = 55;
data->min_efuse_value = 40;
@@ -1231,6 +1227,7 @@ static int exynos_map_dt_data(struct platform_device 
*pdev)
data->tmu_set_emulation = exynos4412_tmu_set_emulation;
data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
data->ntrip = 4;
+   data->gain = 8;
data->reference_voltage = 16;
data->efuse_value = 55;
if (data->soc != SOC_ARCH_EXYNOS5420 &&
@@ -1247,6 +1244,7 @@ static int exynos_map_dt_data(struct platform_device 
*pdev)
data->tmu_set_emulation = exynos4412_tmu_set_emulation;
data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
data->ntrip = 8;
+   data->gain = 8;
if (res.start == EXYNOS5433_G3D_BASE)
data->reference_voltage = 23;
else
@@ -1262,6 +1260,7 @@ static int exynos_map_dt_data(struct platform_device 
*pdev)
data->tmu_set_emulation = exynos5440_tmu_set_emulation;
data->tmu_clear_irqs = exynos5440_tmu_clear_irqs;
data->ntrip = 4;
+   data->gain = 5;
data->reference_voltage = 16;
data->efuse_value = 0x5d2d;
data->min_efuse_value = 16;
@@ -1274,6 +1273,7 @@ static int exynos_map_dt_data(struct platform_device 
*pdev)
data->tmu_set_emulation = exynos4412_tmu_set_emulation;
data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
data->ntrip = 8;
+   data->gain = 9;
data->reference_voltage = 17;
data->efuse_value = 75;
data->min_efuse_value = 15;
diff --git a/drivers/thermal/samsung/exynos_tmu.h 
b/drivers/thermal/samsung/exynos_tmu.h
index 9f4318c..689453d 100644
--- a/drivers/thermal/samsung/exynos_tmu.h
+++ 

[PATCH 07/12] thermal: exynos: remove parsing of samsung,tmu_gain property

[Bartlomiej Zolnierkiewicz]

Since pdata gain values are SoC (not platform) specific just move
it from platform data to struct exynos_tmu_data instance. Then
remove parsing of samsung,tmu_gain property.

There should be no functional changes caused by this patch.

Signed-off-by: Bartlomiej Zolnierkiewicz 
---
 drivers/thermal/samsung/exynos_tmu.c | 18 +-
 drivers/thermal/samsung/exynos_tmu.h |  4 
 2 files changed, 9 insertions(+), 13 deletions(-)

diff --git a/drivers/thermal/samsung/exynos_tmu.c 
b/drivers/thermal/samsung/exynos_tmu.c
index 12bbf79..262ab41 100644
--- a/drivers/thermal/samsung/exynos_tmu.c
+++ b/drivers/thermal/samsung/exynos_tmu.c
@@ -192,6 +192,8 @@
  * @max_efuse_value: maximum valid trimming data
  * @temp_error1: fused value of the first point trim.
  * @temp_error2: fused value of the second point trim.
+ * @gain: gain of amplifier in the positive-TC generator block
+ * 0 < gain <= 15
  * @reference_voltage: reference voltage of amplifier
  * in the positive-TC generator block
  * 0 < reference_voltage <= 31
@@ -218,6 +220,7 @@ struct exynos_tmu_data {
u32 min_efuse_value;
u32 max_efuse_value;
u16 temp_error1, temp_error2;
+   u8 gain;
u8 reference_voltage;
struct regulator *regulator;
struct thermal_zone_device *tzd;
@@ -386,8 +389,6 @@ static int exynos_tmu_initialize(struct platform_device 
*pdev)
 
 static u32 get_con_reg(struct exynos_tmu_data *data, u32 con)
 {
-   struct exynos_tmu_platform_data *pdata = data->pdata;
-
if (data->soc == SOC_ARCH_EXYNOS4412 ||
data->soc == SOC_ARCH_EXYNOS3250)
con |= (EXYNOS4412_MUX_ADDR_VALUE << EXYNOS4412_MUX_ADDR_SHIFT);
@@ -396,7 +397,7 @@ static u32 get_con_reg(struct exynos_tmu_data *data, u32 
con)
con |= data->reference_voltage << EXYNOS_TMU_REF_VOLTAGE_SHIFT;
 
con &= ~(EXYNOS_TMU_BUF_SLOPE_SEL_MASK << 
EXYNOS_TMU_BUF_SLOPE_SEL_SHIFT);
-   con |= (pdata->gain << EXYNOS_TMU_BUF_SLOPE_SEL_SHIFT);
+   con |= (data->gain << EXYNOS_TMU_BUF_SLOPE_SEL_SHIFT);
 
con &= ~(EXYNOS_TMU_TRIP_MODE_MASK << EXYNOS_TMU_TRIP_MODE_SHIFT);
con |= (EXYNOS_NOISE_CANCEL_MODE << EXYNOS_TMU_TRIP_MODE_SHIFT);
@@ -1153,14 +1154,8 @@ static int exynos_of_get_soc_type(struct device_node *np)
 static int exynos_of_sensor_conf(struct device_node *np,
 struct exynos_tmu_platform_data *pdata)
 {
-   u32 value;
-   int ret;
-
of_node_get(np);
 
-   ret = of_property_read_u32(np, "samsung,tmu_gain", );
-   pdata->gain = (u8)value;
-
of_property_read_u32(np, "samsung,tmu_cal_type", >cal_type);
 
of_node_put(np);
@@ -1214,6 +1209,7 @@ static int exynos_map_dt_data(struct platform_device 
*pdev)
data->tmu_read = exynos4210_tmu_read;
data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
data->ntrip = 4;
+   data->gain = 15;
data->reference_voltage = 7;
data->efuse_value = 55;
data->min_efuse_value = 40;
@@ -1231,6 +1227,7 @@ static int exynos_map_dt_data(struct platform_device 
*pdev)
data->tmu_set_emulation = exynos4412_tmu_set_emulation;
data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
data->ntrip = 4;
+   data->gain = 8;
data->reference_voltage = 16;
data->efuse_value = 55;
if (data->soc != SOC_ARCH_EXYNOS5420 &&
@@ -1247,6 +1244,7 @@ static int exynos_map_dt_data(struct platform_device 
*pdev)
data->tmu_set_emulation = exynos4412_tmu_set_emulation;
data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
data->ntrip = 8;
+   data->gain = 8;
if (res.start == EXYNOS5433_G3D_BASE)
data->reference_voltage = 23;
else
@@ -1262,6 +1260,7 @@ static int exynos_map_dt_data(struct platform_device 
*pdev)
data->tmu_set_emulation = exynos5440_tmu_set_emulation;
data->tmu_clear_irqs = exynos5440_tmu_clear_irqs;
data->ntrip = 4;
+   data->gain = 5;
data->reference_voltage = 16;
data->efuse_value = 0x5d2d;
data->min_efuse_value = 16;
@@ -1274,6 +1273,7 @@ static int exynos_map_dt_data(struct platform_device 
*pdev)
data->tmu_set_emulation = exynos4412_tmu_set_emulation;
data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
data->ntrip = 8;
+   data->gain = 9;
data->reference_voltage = 17;
data->efuse_value = 75;
data->min_efuse_value = 15;
diff --git a/drivers/thermal/samsung/exynos_tmu.h 
b/drivers/thermal/samsung/exynos_tmu.h
index 9f4318c..689453d 100644
--- a/drivers/thermal/samsung/exynos_tmu.h
+++ b/drivers/thermal/samsung/exynos_tmu.h
@@ -40,15