Re: CXL 2.0 memory device design

2021-04-06 Thread Igor Mammedov
On Fri, 19 Mar 2021 10:47:11 -0700 Ben Widawsky wrote: > On 21-03-19 18:07:05, Igor Mammedov wrote: > > On Wed, 17 Mar 2021 14:40:58 -0700 > > Ben Widawsky wrote: > > > > > Phil, Igor, Markus > > > > > > TL;DR: What to do about multiple capacities in a single device, and what > > > to do >

Re: CXL 2.0 memory device design

2021-03-19 Thread Ben Widawsky
On 21-03-19 18:07:05, Igor Mammedov wrote: > On Wed, 17 Mar 2021 14:40:58 -0700 > Ben Widawsky wrote: > > > Phil, Igor, Markus > > > > TL;DR: What to do about multiple capacities in a single device, and what to > > do > > about interleave? > > > > I've hacked together a basic CXL 2.0

Re: CXL 2.0 memory device design

2021-03-19 Thread Igor Mammedov
On Wed, 17 Mar 2021 14:40:58 -0700 Ben Widawsky wrote: > Phil, Igor, Markus > > TL;DR: What to do about multiple capacities in a single device, and what to do > about interleave? > > I've hacked together a basic CXL 2.0 implementation which exposes a CXL "Type > 3" > memory device (CXL 2.0

Re: CXL 2.0 memory device design

2021-03-18 Thread Ben Widawsky
On 21-03-17 14:40:58, Ben Widawsky wrote: > Phil, Igor, Markus > > TL;DR: What to do about multiple capacities in a single device, and what to do > about interleave? > > I've hacked together a basic CXL 2.0 implementation which exposes a CXL "Type > 3" > memory device (CXL 2.0 Chapter 2.3). For