Dear Mostafa Youssef,
Thank you. I get values that are much closer to literature.
Dae Kwang Jun
On Thursday, 30 June 2016, Mostafa Youssef wrote:
> Dear Dae Kwang Jun
>
> Equation (1) that you wrote is the correct one.
>
> And you are right bulk V_AlAs and bulk V_GaAs are
Dear Dae Kwang Jun
Equation (1) that you wrote is the correct one.
And you are right bulk V_AlAs and bulk V_GaAs are obtained in a similar way as
in the interface but you need bulk cells. Their values can be anything ,
positive or negative it does not matter and in fact they are arbitrary.
Dear Mostafa Youssef,
Thank you for your reply. I am not sure whether I understand what it is
meant by "where EVBM_AlAs is referred to bulk V_AlAs and EVBM_GaAs is
referred to bulk V_GaAs."
I am assuming that the complete formula is either
(1)
EVBM_offset = (EVBM_AlAs - bulk V_AlAs) - (EVMB_GaAs
Dear Dae Kwang Jun
In addition for each bulk calculation one needs to calculate the bulk average
electrostatic potential. Then for each compound you refer its EVBM to the
electrostatic potential calculated in its bulk (not yet the interface). Only
then you can use the interface
Dear Mostafa Youssef,
I believe that I did that. I am not sure whether we both have the same
thing on mind, however. Here is what I did. I calculated the band
structures for both AlAs and GaAs using pw.x with calculation = 'bands'
after the scf calculations. The VB Maxima of AlAs and GaAs occur
Dear Dae Kwang Jun,
You also need 2 bulk calculations for AlAs and GaAs to get their band edges
with respect to to their bulk electrostatic potentials. Then you can use the
interface potential to align the band edges of the two semiconductors. It
looks like you missed this step.
Mostafa
Dear all,
I tried to calculate the band offset for GaAs-AlAs. However, the valence
band offsets that I am getting are too large. I used 6 unit cells of GaAs
and 6 unit cells of AlAs stacked in the 001 direction. For the offset I
used the potential line up method. I used pw.x pp.x average.x to