[Vo]:Why not Silicon Carbide for the NiH reactor?

The high sublimation temperature of SiC (approximately 2700 °C) makes it at the high end of the insolating ceramic operating temperature range.. Silicon carbide does not melt at any known pressure. It is also highly inert chemically. Its high thermal conductivity, high electric field breakdown

Re: [Vo]:Why not Silicon Carbide for the NiH reactor?

SiC is also interesting to apply as part of a high temperature semiconducter substrate to catch the free electrons and convert them to directly to electricity. See also the patent application of Anthony

Re: [Vo]:Why not Silicon Carbide for the NiH reactor?

structure. . Bob - Original Message - From: Axil Axil To: vortex-l Sent: Tuesday, March 25, 2014 11:40 PM Subject: [Vo]:Why not Silicon Carbide for the NiH reactor? The high sublimation temperature of SiC (approximately 2700 °C) makes it at the high end

Re: [Vo]:Why not Silicon Carbide for the NiH reactor?

graphite would probably work ok also as a containment structure. . Bob - Original Message - *From:* Axil Axil janap...@gmail.com *To:* vortex-l vortex-l@eskimo.com *Sent:* Tuesday, March 25, 2014 11:40 PM *Subject:* [Vo]:Why not Silicon Carbide for the NiH reactor? The high