Dear Jeffei:
I think the implementation of the Gate Voltage in TranSIESTA-C consisted of a simple shift of the Energy reference at the Scattering Region, which simulated the effect of some electrostatic field locally applied. In the TranSIESTA modules within SIESTA that Gate Voltage model has not been implemented, and I am sorry to say that it is not in the near-future road map of implementations. Nevertheless, it should not be too hard for the interested skilled user to include such a shift in the SCF loop. I encourage him to try out and let us know the result ... Yours, Jose a. -- Jose A. Torres, Ph.D. Manager of the SIESTA Software Jeffei Xu <[email protected]> escribió:
Dear all, Can we apply gate voltage in transiesta (siesta 3.0 beta)? I don't find any description about this in the manual. I know it is possible in transiesta-C. Best regards, Jeffei
