Dear all, As we know, the fermi energy of semiconductor can be placed anywhere in the band gap. For intinsic semiconductor, the calculation using pw.x is in agreement with it. But for doped semiconductor, for example, heavily doped semiconductor, the fermi energy should shift into the conduction band or valence band(depend on the type of doping), but the gap is always there. So, the question is: How could we know the heavily doped semiconductor is a metal or semiconductor? Or, the fermi energy calculated is not appropriate in this case?
Thanks a lot. ------------------------------ Jiayu Dai National University of Defense Technology, P R China
