Hello,
As a test, I performed the calculations of the ionization and affinity energy
of P-doped Si nanocrystal. The steps I did as follows:
1. Relax the nanostructure
2. Remove one electron form the above relaxed structure and run scf
calculation for this system to obtain ionization energy (I).
3. Add one electron the relaxed structure (in #1) , and run scf calculation
to obtain the affinity energy (A).
The ionization energy and the affinity energy are calculated by:
A = E(n)-E(n+1)
I = E(n-1)-E(n)
where E is the total state total energy of the n-, (n+1)-, and (n-1)-electron
systems.
When I compared the values of A and I that I obtained with those by a previous
work, PRL 92, 0468021 (2004), I saw a large deviation. The difference is
~0.8eV for I and ~0.4eV for A. (I used the same structure of one the
structures studied in the PRL. By the courtesy, Prof. Cheliskowki sent it to me
for the test purpose).
The calculation in the PRL is performed with real-space ab initio
pseudopotential method. Their calculations of hyperfine splitting agreed very
well with experimental data.
Since my results have large differences from theirs, I am not sure if the
procedures that I did above are incorrect. Could you give some comments if
there is anything wrong from what I did.
Thank you in advance your help,
Trinh Vo
JPL/CalTech
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