Dear all, I am simulating the material behaviour of metal under biaxial strain. (although so-called thin film, the cell does not include any vacuum. it's still bulk).
so i strain the crystal in a and b direction by certain percent. Accordingly the stress in x and y , also z direction go up significantly. I try to reduce the stress in Z direction by changing the C length of the crystal while keeping strain (length of) in A and B. I understanding that i took poisson effect into account by doing so. Is my understanding correct? Pls comments. Wong -------------- next part -------------- An HTML attachment was scrubbed... URL: http://www.democritos.it/pipermail/pw_forum/attachments/20101011/29a15a29/attachment.htm
