Hello all, I am trying to study phonons in silicon under biaxial strain, which occurs when you grow thin films of silicon over a germanium(or SiGe) bulk, which has a slightly larger lattice constant than silicon, thus stretching the silicon out. This type of procedure stretches silicon in the xy directions and slightly compresses it in the z direction. This consequently distorts the symmetry of the crystal.
I have ran some strained cases; in which I "strain" the crystal by changing the lattice vectors in the CELL_PARAMETERS CARD -------------- next part -------------- An HTML attachment was scrubbed... URL: http://pwscf.org/pipermail/pw_forum/attachments/20140814/08163257/attachment.html
