Dear Jonathan Backman,

I suggest you to try and set diago_david_ndim = 2 instead of the default value of diago_david_ndim = 4 if you are using Davidson diagonalization - it helped me to resolve a similar issue in the past. The other thing that helped me was changing a pseudo potenial to a much hard norm-conserving pseudo that contained more semi-core states, however, for performance reason I edned up using diago_david_ndim =2 option.

Best regards,

On 19/06/2019 12:47, Jonathan Backman wrote:
Dear Quantum Espresso community,

I am trying to perform a relax calculation on two different Ni-MoS2 contacts. One top contact (Ni over single layer MoS2) and one edge contact (MoS2 connected to the side of Ni), see attached input file. In both cases I get the error "problems computing cholesky". It has previously been suggested that this can happen in the case of "bad" atom positions, but I do not think this is the case for me, especially since it occurs in both my contacts. The problem also remains when changing the pseudo potentials.

It has also been suggested that the error can be caused by a parallelization issue. For the edge contact I am running on 792 processor cores (distributed over 33 nodes) divided over 11 pools (since I have 11 kpoints) with 72 processors per pool. With current ecutwfc the FFT dimensions are ( 360, 384,  72). To my understanding should give a effective parallelization, sine number of processors/pool is smaller or equal to FFR_3 and is a divisor of it. I have also tried with 264 processors, 24 processors/pool, but the problem still remains.

The calculation is able to perform 2-3 bfgs steps before showing the error at the beginning of the next scf cycle. If I then take the last atom positions and perform  a new relaxation calculation it can once again go through 2-3 bfgs steps before error. Using this method I can continue restarting it, but it is not very effective. If I instead restart the calculation using the last saved charge density it shows the error immediately in the first scf iteration.

I would be happy for any suggestions on how to solve this problem.
Please ask if you want more information.


Best regards,
Jonathan Backman, PhD student
Nano-TCAD Group, ETHZ Switzerland
[email protected]


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Oleksandr Motornyi
PhD

Laboratoire de Solides Irradies
Ecole Polytechnique (Palaiseau, France)

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