Dear all,

I want to compute the all-electron (using PAW) wavefunction squared
directly on atomic sites for semiconductor band edge states.

Since AE wavefunctions are not accessible to my knowledge, I compute
this from the difference of on-site all-electron density (obtained from
pp.x) between doped and undoped runs.

For the bulk Si conduction band, adding 1e-3 electrons to the 2-atom
primitive cell, I find the on-site density increases by 9.61e-4 /
bohr^3. This yields a |\psi|^2 value normalized by the unit-cell average
("bunching factor") of

(9.61e-4 / bohr^3) / (1e-3 / 275.97 bohr^3) = 265

where 275.97 bohr^3 is the unit-cell volume.

However, the much smaller value of 160 was obtained by two previous LAPW
studies [PRB 83, 165301 (2011), PRB 101, 115302 (2020)], and I can
obtain close values using my approach in other PAW codes (e.g., 165 in
abinit).

I am using QE v.6.7MaX with PBE and Si.pbe-n-kjpaw_psl.1.0.0.UPF. When I
significantly ramp up FFT mesh, the discrepancy remains. I tried LDA as
well as using different doping values, pseudopotentials, smearing, and
k-meshes.

Example input is attached, and I'm happy to provide additional info.

Thanks very much,
Eric Isaacs
HRL Labs

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&CONTROL
   calculation               = 'scf'
   prefix                    = 'pw'
   outdir                    = '.'
   pseudo_dir                = '.'
   disk_io                   = 'low'
   verbosity                 = 'high'
/

&SYSTEM
   ibrav                     = 0
   ntyp                      = 1
   nat                       = 2
   nbnd                      = 10
   occupations               = 'tetrahedra'
   nspin                     = 1
   ecutwfc                   = 44.0
   ecutrho                   = 175.0
/

&ELECTRONS
   conv_thr                  = 3.67e-08
   electron_maxstep          = 200
/


ATOMIC_SPECIES
    Si      28.085  Si.pbe-n-kjpaw_psl.1.0.0.UPF

ATOMIC_POSITIONS crystal
    Si   0.00000000   0.00000000   0.00000000
    Si   0.25000000   0.25000000   0.25000000

CELL_PARAMETERS angstrom
        0.00000000   2.73450040   2.73450040
        2.73450040   0.00000000   2.73450040
        2.73450040   2.73450040   0.00000000

K_POINTS automatic
    17 17 17  0 0 0
&CONTROL
   calculation               = 'scf'
   prefix                    = 'pw'
   outdir                    = '.'
   pseudo_dir                = '.'
   disk_io                   = 'low'
   verbosity                 = 'high'
/

&SYSTEM
   ibrav                     = 0
   ntyp                      = 1
   nat                       = 2
   nbnd                      = 10
   occupations               = 'tetrahedra'
   nspin                     = 1
   ecutwfc                   = 44.0
   ecutrho                   = 175.0
   tot_charge                = -0.001
/

&ELECTRONS
   conv_thr                  = 3.67e-08
   electron_maxstep          = 200
/


ATOMIC_SPECIES
    Si      28.085  Si.pbe-n-kjpaw_psl.1.0.0.UPF

ATOMIC_POSITIONS crystal
    Si   0.00000000   0.00000000   0.00000000
    Si   0.25000000   0.25000000   0.25000000

CELL_PARAMETERS angstrom
        0.00000000   2.73450040   2.73450040
        2.73450040   0.00000000   2.73450040
        2.73450040   2.73450040   0.00000000

K_POINTS automatic
    17 17 17  0 0 0
&INPUTPP
   prefix                    = 'pw'
   outdir                    = '.'
   filplot                   = 'ae_rho.dat'
   plot_num                  = 21
   spin_component            = 0
/

&PLOT
   nfile                     = 1
   filepp(1)                 = 'ae_rho.dat'
   weight(1)                 = 1.0
   iflag                     = 3
   output_format             = 6
   fileout                   = 'ae_rho.cube'
/
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