Dear Wannier90 community, I am Abhijeet from IIT Madras (India) attempting to study TE properties at varying temperatures but at a particular (constant) carrier concentration. I am converting desired carrier concentration into chemical potential to input the BoltzWann module. Thus, I would like to know how to compute these TE properties at constant chemical potential (with varying temperature), since, in the input file for BoltzWann, one needs to input boltz_mu_min, boltz_mu_max and boltz_mu_step.
I understand the chemical potential is influenced by temperature and the other code BoltzTraP2 offers the functionality to compute TE properties across a range of temperatures at a constant carrier concentration. How can we achieve this in BoltzWann? Regards, Abhijeet.
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