Google p 2x1 reconstruction
However, I strongly suggest that you read some textbook on surface science, 
whithout knowledge what the surface reconstruction means, it does not make 
sense to calculate anything

Ciao
Gerhard

DEEP THOUGHT in D. Adams; Hitchhikers Guide to the Galaxy:
"I think the problem, to be quite honest with you,
is that you have never actually known what the question is."

====================================
Dr. Gerhard H. Fecher
Institut of Inorganic and Analytical Chemistry
Johannes Gutenberg - University
55099 Mainz
and
Max Planck Institute for Chemical Physics of Solids
01187 Dresden
________________________________________
Von: wien-boun...@zeus.theochem.tuwien.ac.at 
[wien-boun...@zeus.theochem.tuwien.ac.at] im Auftrag von Muhammad Sajjad 
[sajja...@gmail.com]
Gesendet: Montag, 27. Juli 2015 10:51
An: A Mailing list for WIEN2k users
Betreff: Re: [Wien] Reconstructed Si 100 surface

Dear Delamora and Michael
Many thanks for informative suggestions.
 I am intended to study electronic properties of Si (100) of thickness 1 nm. I 
am asked to introduce dimers instead of using H. But my question is "one 
surface of the Si 100 must be passivated by hydrogen or not?"Like If ones 
introduce dimer on the top (maximum Z) then bottom (minimum Z) must be 
passivated or not? Can we introduce dimers on both surfaces (top & bottom). I 
am reading the paper ( http://pubs.acs.org/doi/pdf/10.1021/jp509095t ). What 
does it means P21, P22, P24 reconstructions?

Many thanks


On Sun, Jul 26, 2015 at 10:51 PM, Michael Sluydts 
<michael.sluy...@ugent.be<mailto:michael.sluy...@ugent.be>> wrote:
Muhammad,

When you move the two Si atoms with the dangling bond towards eachother you 
will create a dimer on the surface, no extra passivation by H atoms is needed, 
just ensure you make your slab symmetric where possible. If you google Si 
recontructions you should find very exact geometrical information since this 
has been done many times before.

Best regards,

Michael Sluydts

Muhammad Sajjad schreef op 26/07/2015 om 17:59:
Thank you Pablo
But I am required to connect two Si atoms at the surface to reduce one dangling 
bond and then put H or may be H is not needed if both of the dangling bonds 
have possibility of omitting. I am reading the paper but could not understand 
although Fig. 2 is looking easy to understand. WHat is 2*1 or 2*2 or 2*4 ? are 
the super-cells like 2*1*1 or 2*2*1 etc.


On Sun, Jul 26, 2015 at 6:22 PM, delamora 
<delam...@unam.mx<mailto:delam...@unam.mx>> wrote:

This is the same that I simplified and symmetized. If you are going to add H 
then you need set the space group as P1 (#1) so the H can move freely and not 
in a symmetrical path.

Now, if you use my proposed structure then you can put inversion (SG P-1, #2) 
and add two H, one on each surface, but in a symmetric way.

Other thing, maybe my proposed structure is too small and your structure is ok, 
but I would symmetrize as I explained in an earlier message.

                       Pablo
________________________________
De: 
wien-boun...@zeus.theochem.tuwien.ac.at<mailto:wien-boun...@zeus.theochem.tuwien.ac.at>
 
<wien-boun...@zeus.theochem.tuwien.ac.at<mailto:wien-boun...@zeus.theochem.tuwien.ac.at>>
 en nombre de Muhammad Sajjad <sajja...@gmail.com<mailto:sajja...@gmail.com>>
Enviado: domingo, 26 de julio de 2015 04:44 a. m.
Para: wien
Asunto: [Wien] Reconstructed Si 100 surface

Dear Users
Kindly guide me how to reconstruct Si 100 layer? The Si 100 structure is 
attached here with. It has two dangling bonds on both surfaces (Top and 
Bottom). My intension is to keep one dangling bond on the top and bottom 
surfaces that will be saturated by H addition.
--
Kind Regards
Muhammad Sajjad
Post Doctoral Fellow
KAUST, KSA.

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--
Kind Regards
Muhammad Sajjad
Post Doctoral Fellow
KAUST, KSA.



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--
ir. Michael Sluydts
Center for Molecular Modeling
Ghent University
Technologiepark 903
9052 Zwijnaarde, Belgium
tel. +32 (0)9 264 66 19
https://molmod.ugent.be

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--
Kind Regards
Muhammad Sajjad
Post Doctoral Fellow
KAUST, KSA.
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