Bob Friesenhahn <bfriesen <at> simple.dallas.tx.us> writes: > > The Intel specified random write IOPS are with the cache enabled and > without cache flushing.
For random write I/O, caching improves I/O latency not sustained I/O throughput (which is what random write IOPS usually refer to). So Intel can't cheat with caching. However they can cheat by benchmarking a brand new drive instead of an aged one. > They also carefully only use a limited span > of the device, which fits most perfectly with how the device is built. AFAIK, for the X25-E series, they benchmark random write IOPS on a 100% span. You may be confusing it with the X25-M series with which they actually clearly disclose two performance numbers: 350 random write IOPS on 8GB span, and 3.3k on 100% span. See http://www.intel.com/cd/channel/reseller/asmo-na/eng/products/nand/tech/425265.htm I agree with the rest of your email. -mrb _______________________________________________ zfs-discuss mailing list firstname.lastname@example.org http://mail.opensolaris.org/mailman/listinfo/zfs-discuss