Wednesday June 8 11:00 - 11:50 AM Owen 106 Reza Navid Ph.D. Candidate Electrical Engineering Stanford University
Amplitude and phase noise in modern CMOS circuits Understanding noise in submicron MOS devices is an ongoing challenge in the area of mixed-signal modeling. Experimental observations show that the classical long-channel MOSFET noise formulation underestimates the drain current noise of short-channel devices by a factor often referred to as the excess noise factor. In order to predict the effects of this excess noise on amplitude and phase noise in future circuits, it is crucial to have a reliable MOSFET noise model and an accurate phase noise formulation. This presentation outlines the latest theoretical and experimental results of Stanford's TCAD and Microwave Integrated Circuits (SMIrC) labs on this issue. Directions for further research will also be discussed. _______________________________________________ Colloquium mailing list [email protected] https://secure.engr.oregonstate.edu/mailman/listinfo/colloquium
