I apologize for asking all these questions. But I am confused by the 3D view.
I am using the mocmos technology. When I put down a nfet or pfet and look at in 3D View the solid green rectangle (which I am assuming is the n or p implant volume) appears to run completely under the poly- silicon rectangle. Is this correct? Both FETs show a darker volume surrounding the green area. Should I assume this represents the depletion region? Finally I see the light gray volume surrounding the whole device. I assume this is the substrate material, but then again may be it is the well material in the pFet case. I am also a little confused on what the difference is between the nWell and pWell nodes and the nAct and pAct nodes. Do I just use the nWell and pWell nodes to tie the body connections to the correct voltage level? When I use pFets I assume I need to place down an nWell. Does this get done automatically by Electric or do I need to place a pure nWell down first? And finally I can place pure pWells down. Is this something that is allowed in most processes? Can I places this in an nWell? Where would I use this? Oliver -- You received this message because you are subscribed to the Google Groups "Electric VLSI Editor" group. To post to this group, send email to [email protected]. To unsubscribe from this group, send email to [email protected]. For more options, visit this group at http://groups.google.com/group/electricvlsi?hl=en.
