Since pdata efuse values are SoC (not platform) specific just move
them from platform data to struct exynos_tmu_data instance. Then
remove parsing of samsung,tmu[_,min_,max]_efuse_value properties.

There should be no functional changes caused by this patch.

Signed-off-by: Bartlomiej Zolnierkiewicz <b.zolnier...@samsung.com>
---
 drivers/thermal/samsung/exynos_tmu.c | 49 +++++++++++++++++++++++-------------
 drivers/thermal/samsung/exynos_tmu.h |  7 ------
 2 files changed, 32 insertions(+), 24 deletions(-)

diff --git a/drivers/thermal/samsung/exynos_tmu.c 
b/drivers/thermal/samsung/exynos_tmu.c
index 1fa162d..9a0e961 100644
--- a/drivers/thermal/samsung/exynos_tmu.c
+++ b/drivers/thermal/samsung/exynos_tmu.c
@@ -185,6 +185,9 @@
  * @clk: pointer to the clock structure.
  * @clk_sec: pointer to the clock structure for accessing the base_second.
  * @sclk: pointer to the clock structure for accessing the tmu special clk.
+ * @efuse_value: SoC defined fuse value
+ * @min_efuse_value: minimum valid trimming data
+ * @max_efuse_value: maximum valid trimming data
  * @temp_error1: fused value of the first point trim.
  * @temp_error2: fused value of the second point trim.
  * @regulator: pointer to the TMU regulator structure.
@@ -207,6 +210,9 @@ struct exynos_tmu_data {
        struct work_struct irq_work;
        struct mutex lock;
        struct clk *clk, *clk_sec, *sclk;
+       u32 efuse_value;
+       u32 min_efuse_value;
+       u32 max_efuse_value;
        u16 temp_error1, temp_error2;
        struct regulator *regulator;
        struct thermal_zone_device *tzd;
@@ -283,20 +289,18 @@ static int code_to_temp(struct exynos_tmu_data *data, u16 
temp_code)
 
 static void sanitize_temp_error(struct exynos_tmu_data *data, u32 trim_info)
 {
-       struct exynos_tmu_platform_data *pdata = data->pdata;
-
        data->temp_error1 = trim_info & EXYNOS_TMU_TEMP_MASK;
        data->temp_error2 = ((trim_info >> EXYNOS_TRIMINFO_85_SHIFT) &
                                EXYNOS_TMU_TEMP_MASK);
 
        if (!data->temp_error1 ||
-               (pdata->min_efuse_value > data->temp_error1) ||
-               (data->temp_error1 > pdata->max_efuse_value))
-               data->temp_error1 = pdata->efuse_value & EXYNOS_TMU_TEMP_MASK;
+           (data->min_efuse_value > data->temp_error1) ||
+           (data->temp_error1 > data->max_efuse_value))
+               data->temp_error1 = data->efuse_value & EXYNOS_TMU_TEMP_MASK;
 
        if (!data->temp_error2)
                data->temp_error2 =
-                       (pdata->efuse_value >> EXYNOS_TRIMINFO_85_SHIFT) &
+                       (data->efuse_value >> EXYNOS_TRIMINFO_85_SHIFT) &
                        EXYNOS_TMU_TEMP_MASK;
 }
 
@@ -655,7 +659,6 @@ static int exynos7_tmu_initialize(struct platform_device 
*pdev)
 {
        struct exynos_tmu_data *data = platform_get_drvdata(pdev);
        struct thermal_zone_device *tz = data->tzd;
-       struct exynos_tmu_platform_data *pdata = data->pdata;
        unsigned int status, trim_info;
        unsigned int rising_threshold = 0, falling_threshold = 0;
        int ret = 0, threshold_code, i;
@@ -672,9 +675,9 @@ static int exynos7_tmu_initialize(struct platform_device 
*pdev)
 
        data->temp_error1 = trim_info & EXYNOS7_TMU_TEMP_MASK;
        if (!data->temp_error1 ||
-           (pdata->min_efuse_value > data->temp_error1) ||
-           (data->temp_error1 > pdata->max_efuse_value))
-               data->temp_error1 = pdata->efuse_value & EXYNOS_TMU_TEMP_MASK;
+           (data->min_efuse_value > data->temp_error1) ||
+           (data->temp_error1 > data->max_efuse_value))
+               data->temp_error1 = data->efuse_value & EXYNOS_TMU_TEMP_MASK;
 
        /* Write temperature code for rising and falling threshold */
        for (i = (of_thermal_get_ntrips(tz) - 1); i >= 0; i--) {
@@ -1136,13 +1139,6 @@ static int exynos_of_sensor_conf(struct device_node *np,
        of_property_read_u32(np, "samsung,tmu_reference_voltage", &value);
        pdata->reference_voltage = (u8)value;
 
-       of_property_read_u32(np, "samsung,tmu_efuse_value",
-                            &pdata->efuse_value);
-       of_property_read_u32(np, "samsung,tmu_min_efuse_value",
-                            &pdata->min_efuse_value);
-       of_property_read_u32(np, "samsung,tmu_max_efuse_value",
-                            &pdata->max_efuse_value);
-
        of_property_read_u32(np, "samsung,tmu_cal_type", &pdata->cal_type);
 
        of_node_put(np);
@@ -1196,6 +1192,9 @@ static int exynos_map_dt_data(struct platform_device 
*pdev)
                data->tmu_read = exynos4210_tmu_read;
                data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
                data->ntrip = 4;
+               data->efuse_value = 55;
+               data->min_efuse_value = 40;
+               data->max_efuse_value = 100;
                break;
        case SOC_ARCH_EXYNOS3250:
        case SOC_ARCH_EXYNOS4412:
@@ -1209,6 +1208,13 @@ static int exynos_map_dt_data(struct platform_device 
*pdev)
                data->tmu_set_emulation = exynos4412_tmu_set_emulation;
                data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
                data->ntrip = 4;
+               data->efuse_value = 55;
+               if (data->soc != SOC_ARCH_EXYNOS5420 &&
+                   data->soc != SOC_ARCH_EXYNOS5420_TRIMINFO)
+                       data->min_efuse_value = 40;
+               else
+                       data->min_efuse_value = 0;
+               data->max_efuse_value = 100;
                break;
        case SOC_ARCH_EXYNOS5433:
                data->tmu_initialize = exynos5433_tmu_initialize;
@@ -1217,6 +1223,9 @@ static int exynos_map_dt_data(struct platform_device 
*pdev)
                data->tmu_set_emulation = exynos4412_tmu_set_emulation;
                data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
                data->ntrip = 8;
+               data->efuse_value = 75;
+               data->min_efuse_value = 40;
+               data->max_efuse_value = 150;
                break;
        case SOC_ARCH_EXYNOS5440:
                data->tmu_initialize = exynos5440_tmu_initialize;
@@ -1225,6 +1234,9 @@ static int exynos_map_dt_data(struct platform_device 
*pdev)
                data->tmu_set_emulation = exynos5440_tmu_set_emulation;
                data->tmu_clear_irqs = exynos5440_tmu_clear_irqs;
                data->ntrip = 4;
+               data->efuse_value = 0x5d2d;
+               data->min_efuse_value = 16;
+               data->max_efuse_value = 76;
                break;
        case SOC_ARCH_EXYNOS7:
                data->tmu_initialize = exynos7_tmu_initialize;
@@ -1233,6 +1245,9 @@ static int exynos_map_dt_data(struct platform_device 
*pdev)
                data->tmu_set_emulation = exynos4412_tmu_set_emulation;
                data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
                data->ntrip = 8;
+               data->efuse_value = 75;
+               data->min_efuse_value = 15;
+               data->max_efuse_value = 100;
                break;
        default:
                dev_err(&pdev->dev, "Platform not supported\n");
diff --git a/drivers/thermal/samsung/exynos_tmu.h 
b/drivers/thermal/samsung/exynos_tmu.h
index b111a01..4c49312 100644
--- a/drivers/thermal/samsung/exynos_tmu.h
+++ b/drivers/thermal/samsung/exynos_tmu.h
@@ -45,9 +45,6 @@ enum soc_type {
  * @reference_voltage: reference voltage of amplifier
  *     in the positive-TC generator block
  *     0 < reference_voltage <= 31
- * @efuse_value: platform defined fuse value
- * @min_efuse_value: minimum valid trimming data
- * @max_efuse_value: maximum valid trimming data
  * @cal_type: calibration type for temperature
  *
  * This structure is required for configuration of exynos_tmu driver.
@@ -56,10 +53,6 @@ struct exynos_tmu_platform_data {
        u8 gain;
        u8 reference_voltage;
 
-       u32 efuse_value;
-       u32 min_efuse_value;
-       u32 max_efuse_value;
-
        u32 cal_type;
 };
 
-- 
1.9.1

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