On Wed, Jun 25, 2008 at 9:43 AM, Stephen Irons <[EMAIL PROTECTED]> wrote: > Nick Rout wrote: >> > Flash devices take a certain length of time to write to the non-volatile > cells inside the flash IC. Also, banks of cells have to be erased to > make space for more data. Finally, the read access time is MUCH faster > than the write and erase time. > > It so happens that I have a data sheet for a flash device on my desk... > > Samsung K9KG08R0B (128 Mbyte NAND flash) > > Page write cycle time: 200 us > Page write size: 512 bytes > > This means that this particular flash device can write 512 bytes in 200 > us = 2.56 bytes/us or about 2.6 mega bytes per second.
Thats pretty well what I was seeing on write. Thanks for the info everyone who responded, most interesting.
