On Apr 14, 2014, at 6:19 AM, prem prakash singh <prem0prak...@gmail.com> wrote:
> The fixed Si waveguide (both end) is of 10 um and suspended Si waveguide is
> of 50 um. The device thickness is of .26 um and substrate thickness is 2 um.
> I did 2D MEEP modeling.
> For transmission flux, I took above structure and then collected flux at the
> end of suspended waveguide(before gap).
> For incident flux, I took a continuous waveguide instead of gap. Then
> collected incident flux at the same point as transmission flux.
> For both flux, Structure (till collection point) and collection point is same
> , structure is same. But both flux spectrum is different.
If you put a flux plane right before a gap or other obstruction, the result
will include both the incident flux and some scattered/reflected flux. That is
why your calculations are different.
This is why we tend to recommend using a separate simulation (with no
scatterer) for normalization purposes, to get the incident flux, as in the Meep
tutorial.
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