​Dear Carlos,

If everything in your input file is OK, when DFT suffers so much from self 
interaction error, e.g. for a highly correlated system, this may happen. Please 
see : " Carbon 144, 615 (2019).


Best wishes,


Farah.

On Tue, 07/16/2019 09:34 AM, "Ayestaran Latorre, Carlos" 
<[email protected]> wrote:
> 








Hi,


> 


I have a system consistent of a diamond slab with a boron substitutional 
defect, an adsorbed hydroxyl and an adsorbed hydrogen on the surface. The 
system has an odd number of electrons (487) and I run a spin polarized 
(nspin=2) structural relaxation (see attached).
 One would expect an odd value for the total magnetization, but the it quickly 
converges to zero.

> 



> 


I assumed this would be a side effect of smearing allowing partial electronic 
occupations (I employed gaussian smearing with degauss=0.02). I tried lowering 
the smearing value down to 0.001, both for gaussian and mv smearing, but only 
managed to get total magnetization
 ~ 0.3 Bohr mag/cell in both cases. Fixing tot_magnetization=1, however, yields 
a noticeably higher final energy (~0.3 eV).


> 


When I run a structural relaxation on a similar system (with an adsorbed H2O 
molecule instead of the hydroxyl+hydrogen fragments), the total magnetization 
satisfyingly reaches 1 Bohr mag/cell rather quickly. Other combinations (for 
example, without the H2O
 molecule at all) also give total magnetization values that don't match the 
even/odd number of electrons.


> 


Regards,

Carlos Ayestaran Latorre


> 



> 



> 





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