Mike Carrell wrote:
It may not be true that the specific construction described in the Correa patents is of the essence, or that disclosure overcomes barriers to commercial uitlization, but nobody can say that their work is mysterious or obscure until they with competence have duplicated what is in the patents. And I do mean "duplicated", not "imitated". After long contemplation of the phenomenon, there are aspects which seem strange indeed. Why not use wall-powered supplies to provide the setup conditions instead of batteries? Years ago Paulo said such supplies were destroyed when the PAGD pulse let go. Why? I don't know. Why not make LENR cells with cathodes cut from soup cans? It's cheaper.
Mike, I agree, the early transistor experience is very similar to what people now suffer with cold fusion. For example, one of the major problems with early transistors was the level of required purity. Very small amounts of impurity in the Ge would cause large and unexpected changes in the electrical properties. These amounts were below the level of detection until new analytical tools were developed. The same is true of cold fusion. The active material is a very small amount of material deposited on an inert substrate, a domain that is too small to see by normal methods. Therefore, once again, new tools must be applied, in addition to a new attitude.
Palladium was used initially and is still thought to be the active material by some people. However, the palladium is only an inert substrate on which the active material deposits. Once the proper deposit has been identified, the effect will be completely reproducible regardless of what is used as the inert substrate. Soup cans would work just as well, provided the proper deposits are applied. The point I'm making is that knowing the important variables is more important than simply duplicating the effect. This requires making assumptions about the basic process. In the case of the transistor, the basic process involved electron conduction. The basic process in cold fusion involves a nuclear process in a solid lattice. For flight, the basic process involves the pressure differential created by air flowing over a curved surface. In each case, success was achieved by understanding the basic process. For transistors, the conduction band became the center of attention, for cold fusion, the solid structure is important, and for flight, the pressure of flowing air is measured. So I ask, what is the basic process in the PAGD effect? For example, how can moving ions extract energy from their surroundings? Why must the ions and/or electrons only move in a certain way, as caused by the unique applied voltage? How can this required motion be achieved other ways to give the same result? I suggest these are some of the questions that need answers, assuming the PAGD effect actually produces over unity energy. In other words, I'm suggesting that the basic process in the PAGD effect is ion/electron motion. The rest of the device is only important to produce the unique voltage pulse, just as the inert substrate in a F-P cell is only important to hold the active deposit. Discover what is unique about the voltage pulse, and the effect could be reproduced at will in many kinds of devices.
Regards, Ed
