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On Mon, Sep 17, 2007 at 11:37:43AM -0500, Jon Elson wrote:
> I've been waiting for these to become reasonable for years, I'm 
> still waiting.  But, they are getting closer.  The wearout 
> cycles on flash memory is improving, too, and there are some 
> ferroelectric RAM technologies that will have wearout in the 
> billion cycle range, but they are not anywhere as dense as flash 
> yet.

That reminds me... I was looking at some FRAM datasheets, for RTC+FRAM's
actually from Maxim, and they stated a 10-year data retention lifetime.
Eeproms are specced at least 40 years, (pic chips) to even 200 years.
(some eeproms from Microchip)

So looks like FRAM trade's off large numbers of cycle writes with data
retention.

- -- 
http://petertodd.org
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