[ . . . . . . . Snip!!! . . . . . ] > > Yeah, thanks. Now some questions: > > > > 1. Will the parameters of the calculations apply to *all* MOSFETs? > > Or to just those whose model-name is "nmos"? The point here is that > > I need to know what attribute to key off of -- the (DEVICE or REFDES) > > or the MODEL-NAME. > > The parameters can be expected to vary based on the device. For example, > some MOS processes offer options like a low threshold voltage device or a > thicker oxide device to support a higher voltage I/O. The design rules > would be different for these devices.
So that means that each device of a particular geometry must have an individual MODEL-NAME & incorporation of technology file information would key off of the MODEL-NAME. > > 2. Are the formulas used the same for all MOSFETs? Or does they vary > > from model to model? (Note that I don't mean the coefficients, but > > rather the actual form of the formulae.) > > [. . . . . . . . .] > > I _think_ the formulas should be constant for different processes but with > different parameters. However, I can't claim to have enough experience in > delving into that level of detail on the cad system for enough different > processes to be sure. Do you have any friends who are device physicists who could answer this question? I can ask around, but it may take a while . . . . Stuart