On Tue, 25 Mar 2003, Stuart Brorson wrote:
> [ . . . . . . . Snip!!! . . . . . ] > > > Yeah, thanks. Now some questions: > > > > > > 1. Will the parameters of the calculations apply to *all* MOSFETs? > > > Or to just those whose model-name is "nmos"? The point here is that > > > I need to know what attribute to key off of -- the (DEVICE or REFDES) > > > or the MODEL-NAME. > > > > The parameters can be expected to vary based on the device. For example, > > some MOS processes offer options like a low threshold voltage device or a > > thicker oxide device to support a higher voltage I/O. The design rules > > would be different for these devices. > > So that means that each device of a particular geometry must have an > individual MODEL-NAME & incorporation of technology file information > would key off of the MODEL-NAME. this line should probably say 'each device of a particular family'. Ie, all regular threshold nmos devices would call the same model (perhaps 'nmos') all low threshold devices would call that model (perhaps 'nmos_native'), etc. > > > 2. Are the formulas used the same for all MOSFETs? Or does they vary > > > from model to model? (Note that I don't mean the coefficients, but > > > rather the actual form of the formulae.) > > > > [. . . . . . . . .] > > > > I _think_ the formulas should be constant for different processes but with > > different parameters. However, I can't claim to have enough experience in > > delving into that level of detail on the cad system for enough different > > processes to be sure. > > Do you have any friends who are device physicists who could answer > this question? I can ask around, but it may take a while . . . . I can ask a few people. -Dan
