It's the leakage (Icbo) that is 1000x greater in the MJE device, not the current gain. There are many factors affecting leakage and current gain:
- Some are environmental (temperature, reverse-voltage, operating current) - Some are device construction (physical dimensions of base width & area; emitter area), processing (diffusion, epitaxial growth) - Some are chemical (doping levels for N & P) - Some are device physics(leakage current density, density of states, etc. Lots of math here..) The leakage is also directly proportional to the DC current gain. The nice thing about nixie tubes is they use relatively low current, so most devices used for drivers wont get pushed into unsafe areas of operation. -- You received this message because you are subscribed to the Google Groups "neonixie-l" group. To unsubscribe from this group and stop receiving emails from it, send an email to [email protected]. To view this discussion on the web, visit https://groups.google.com/d/msgid/neonixie-l/ced50e9c-467e-4d6e-a318-10f9b85bc671%40googlegroups.com.
